Superconductive memory cells and devices

ABSTRACT

An electronic device includes a substrate and a layer of superconducting material disposed over the substrate. The layer of superconducting material includes a first wire and a loop that is (i) distinct and separate from the first wire and (ii) capacitively coupled to the first wire while the loop and the first wire are in a superconducting state.

RELATED APPLICATION

This application is a continuation of U.S. patent application Ser. No.16/543,256, filed Aug. 16, 2019, now U.S. Pat. No. 10,984,857, whichclaims the benefit of, and priority to, U.S. Provisional Application62/765,240, filed Aug. 16, 2018, which is hereby incorporated byreference in its entirety.

TECHNICAL FIELD

This relates generally to electronic devices (e.g., memory cells) and,more specifically, to memory cells that operate based on the propertiesof superconducting materials.

BACKGROUND

In electrical circuits and devices, there is often a need to storeinformation. The need to store information ranges from single bitapplications (e.g., storage of register values) to applications inrandom access memory (RAM) and long-term data storage. Memory cells,which store one or more bits of information, are the fundamentalbuilding blocks of information storage devices. Thus, memory cells areessential components in many memory devices.

Superconductors are materials capable of operating in a superconductingstate with exactly zero electrical resistance under particularconditions. Because of many useful properties of superconductors, memorycells based on superconductors are expected to have superior performanceover conventional memory cells. However, prior memory devices thatinclude superconductors had limited reliability.

SUMMARY

Accordingly, there are needs for memory cells based on superconductivitywith high reliability. The present disclosure provides thin film memorycells based on superconducting materials, thereby utilizing theadvantages of superconducting materials (e.g., zero resistance undercertain conditions). In addition, the unique structure of memory cellsallows improved operational reliability. Furthermore, memory cells thatare superconducting can be integrated more easily (e.g., monolithically)with other superconducting components in circuits and devices. Suchcircuits and devices are often used for making sensitive measurements.For example, superconducting circuits play a critical role insuperconducting quantum interference devices (SQUIDs). Superconductingcomponents also play an important role in sensitive opticalmeasurements, which have applications in quantum computing. For thesepurposes, there is a need for memory cells whose operating principlesare based on the properties of superconducting materials.

In accordance with some embodiments, an electronic device (e.g., amemory cell) is provided. The electronic device includes a substrate anda layer of superconducting material disposed over the substrate. Thelayer of superconducting material is patterned to form a plurality ofdistinct instances of the layer of superconducting material including: afirst wire and a loop that is (i) distinct and separate from the firstwire and (ii) capacitively coupled to the first wire while the loop andthe first wire are in a superconducting state. The loop is configured toform a persistent current via the capacitive coupling in response to awrite current applied to the first wire while the loop and the firstwire are in the superconducting state. The persistent current representsa logic state of the electronic device.

Additionally, in accordance with some embodiments, an electronic device(e.g., a memory cell) is provided. The electronic device includes afirst wire made of a superconducting material and a loop that is made ofa superconducting material. The loop is distinct and separate from anyother electrical wire, including the first wire. The loop iscapacitively coupled to the first wire while in a superconducting state.The loop is configured to form a persistent current via the capacitivecoupling in response to a write current applied to the first wire. Thepersistent current represents a logic state of the electronic device.

Additionally, the present disclosure provides a method of using a thinfilm memory device based on superconducting materials. The methodincludes obtaining an electronic device comprising: a substrate; a firstwire of superconducting material disposed over the substrate; and a loopof superconducting material disposed over the substrate. When the loopand the first wire are in a superconducting state, the loop iscapacitively coupled to the first wire. The method further includes,while the loop and the first wire are in a superconducting state,applying a current to the first wire, thereby transferring a persistentcurrent to the loop via the capacitive coupling between the first wireand the loop. The persistent current in the loop represents a logicstate.

BRIEF DESCRIPTION OF THE DRAWINGS

For a better understanding of the various described embodiments,reference should be made to the Detailed Description below, inconjunction with the following drawings in which like reference numeralsrefer to corresponding parts throughout the figures.

FIGS. 1A-1C are schematic diagrams illustrating a plan view andcross-sectional views, respectively, of a superconducting memory cell inaccordance with some embodiments.

FIG. 1D is a schematic diagram illustrating a cross-sectional view of asuperconducting memory device cell in accordance with some embodiments.

FIGS. 2A-2F are schematic diagrams illustrating an example of theoperation of a superconducting memory cell in accordance with someembodiments.

FIG. 3 is a schematic diagram illustrating a memory device havingsuperconducting memory cells in accordance with some embodiments.

FIG. 4 is a flow diagram illustrating a method of using a memory devicebased on superconducting materials in accordance with some embodiments.

DETAILED DESCRIPTION

The memory cells described herein operate based on the particularproperties of superconducting materials, namely that superconductingmaterials have zero-resistance while in a superconducting state butbecome resistive (e.g., non-superconducting) under certain conditions.For example, a superconducting material superconducts (e.g., has zeroelectrical resistance) only below a particular temperature (called thematerial's critical temperature) (e.g., the superconducting material isin a superconducting state having zero electrical resistance only belowthe critical temperature). This temperature is specific to theparticular superconducting material and varies with the ambientpressure. For example, at one atmosphere of pressure (e.g., 101 kPa),niobium (Nb) superconducts below 9.26 kelvin while niobium oxide (NbO)superconducts below 1.38 kelvin.

In addition, superconducting materials can support only a limiteddensity of electrical current before transitioning to a resistive state.The limit on the amount of current density that the superconductingmaterial can support before becoming resistive is called the criticalcurrent density. For example, a superconducting material conducts acurrent having a current density below the critical current density withno electrical resistance (e.g., at a temperature below thesuperconducting material's critical temperature) and the superconductingmaterial conducts a current having a current density above the criticalcurrent density with non-zero electrical resistance (e.g., even at atemperature below the superconducting material's critical temperature).The critical current density is also specific to the material anddependent on various external conditions (e.g., ambient pressure,magnetic field).

The devices described herein take advantage of these effects. Inparticular, the present disclosure provides a memory cell that operatesbased on superconductivity. Accordingly, a memory cell is provided thatincludes an isolated loop of superconducting material and a wire,separated from the loop, made of superconducting material (e.g., thesame superconducting material or a different superconducting material).The wire can be used to write information to the loop (e.g., write oneor more bits of information). As long as both the write wire and theloop are superconducting, the loop of superconducting material iscapacitively coupled to the write wire. Under these conditions, a writecurrent applied to the write wire will “jump” to the superconductingloop via the capacitive coupling (e.g., the write current has an ACcomponent that is transferred to the loop through the capacitivecoupling). Because the superconducting loop has zero-resistance in thesuperconducting state, the current on the loop is persistent and willremain on the loop until it is time for the datum to be read out. Inother words, in response to application of a write current to the writewire, the superconducting loop stores a persistent circulation currentthat can represent a logic state of the memory cell (e.g., a “0” or a“1”).

In some embodiments, phase transitions (e.g., to a resistive state) areused to control other aspects of memory management. For instance, insome embodiments, the device further includes a read wire made ofsuperconducting material and a heating element to heat the read wire. Insome embodiments, the heating element initially remains in an “on”state, which heats the read wire above its critical temperature andmaintains the read wire in a resistive state. When the heating elementis turned off, the read wire drops below its critical temperature,becomes superconducting, and is capacitively coupled to the loop. Apersistent current on the loop will then jump to the read wire, allowinga read out operation. In such embodiments, the heating element gates theread out of the memory cell so that read out is delayed until theheating element is turned off. Similarly, heating the loop to aresistive state can be used to erase the logic state of the loop (e.g.,when the loop becomes resistive, the persistent current will resistivelydissipate).

In some embodiments, the critical current density of superconductingmaterials is used to control certain operations of the memory cell. Forexample, in some embodiments, the write wire includes a constriction(e.g., a notch) that is designed (e.g., geometrically) to cause thecurrent density in the write wire to exceed its critical current densityafter the persistent current has been formed in the loop. This causesthe write wire to become resistive, which eliminates (or at leastadequately diminishes) the capacitive coupling between the write wireand the loop. Thus, in some embodiments, the write wire“auto-deactivates” upon application of a write current so that thepersistent current in the loop does not “jump back” to the write wire.

The memory cells described herein thus take advantage of the benefits ofsuperconducting materials (e.g., their zero-resistance and their phasetransitions to resistive states). In addition, because the memory cellis made from superconducting materials, the devices described herein canbe easily integrated (e.g., monolithically) with other superconductingcircuitry, thus interfacing seamlessly with applications wheresuperconducting circuitry is used to manipulate information.

Reference will now be made in detail to embodiments, examples of whichare illustrated in the accompanying drawings. In the following detaileddescription, numerous specific details are set forth in order to providea thorough understanding of the various described embodiments. However,it will be apparent to one of ordinary skill in the art that the variousdescribed embodiments may be practiced without these specific details.In other instances, well-known methods, procedures, components,circuits, and networks have not been described in detail so as not tounnecessarily obscure aspects of the embodiments.

As used herein, the term “superconducting circuit” means a circuit forwhich some aspect of the circuit's functionality relies on thesuperconducting properties of superconducting materials. In someembodiments, a superconducting circuit includes a superconductingmaterial.

As used herein, the term “superconducting material” means a materialthat exhibits superconducting behavior under certain conditions (e.g.,temperature, pressure, magnetic, and current density conditions). Whenthose conditions are met, the superconducting material is said to be ina superconducting state. For example, a superconducting material is amaterial that operates as a superconductor (e.g., operates with zeroelectrical resistance) when cooled below a particular temperature(called the critical temperature) and having less than a thresholdcurrent density flowing through it (called the critical currentdensity). Depending on the conditions, a superconducting material mayalso be in a resistive, or non-superconducting, state (e.g., a state inwhich the material has a non-zero electrical resistance). For example, asuperconducting material supplied with a current that exceeds thecritical current density for the superconducting material transitionsfrom a superconducting state having zero electrical resistance to anon-superconducting state having non-zero electrical resistance. Thus,as used herein, a superconducting material is one that is capable ofsuperconducting under certain conditions, but need not always besuperconducting.

As used herein, a “wire” is a section of material configured fortransferring electrical current. In some embodiments, a wire includes asection of material conditionally capable of transferring electricalcurrent (e.g., a wire made of a superconducting material that is capableof transferring electrical current while the wire is in asuperconducting state). In some embodiments, a length of a wire isgreater than a width or a thickness of the wire (e.g., the length of awire is at least 5, 6, 7, 8, 9, or 10 times greater than the width andthe thickness of the wire).

FIGS. 1A-1C illustrate a plan view and cross-sectional views,respectively, of a superconducting memory cell 100 in accordance withsome embodiments. In particular, FIG. 1B shows a cross-sectional viewalong cross-section AA′ shown in FIG. 1A, and FIG. 1C shows across-sectional view along cross-section BB′ shown in FIG. 1A.

FIG. 1A illustrates a superconducting memory cell 100 in accordance withsome embodiments. In some embodiments, a memory cell is a fundamentalbuilding block of memory devices (e.g., computer memory). To that end, amemory cell is, generally, an electronic circuit that stores one or morebits of information (e.g., binary information), which can be representedby a charge or current stored in the memory cell (e.g., some embodimentsdescribed below represent a bit as a current stored within a loop). Thememory cell can be set to indicate a logical 1 state and reset toindicate a logical 0 state (e.g., a current on the loop is stored toindicate the logical 1 state and the current on the loop is removed toindicate the logical 0 state, or vice-versa). Additionally oralternatively, the memory cell can be set to indicate a logical 0 stateand reset to indicate a logical 1 state. The state indicated by thememory cell is maintained and stored until it is changed by a set/resetprocess. The state indicated by the memory cell can be accessed by, forexample, determining the current stored in the memory cell.

In some embodiments, superconducting memory cell 100 includes asubstrate 102 (e.g., a silicon substrate, a quartz substrate, or anyother suitable substrate). In some embodiments, substrate 102 is aportion of a wafer (e.g., a chip). The wafer may have a thickness ofseveral hundreds of microns (e.g., a standard 400 m wafer). In someembodiments, some or all of the remaining components of superconductingmemory cell 100 are fabricated upon or over (e.g., monolithicallyintegrated with) substrate 102. For example, superconducting memory cell100 includes a patterned layer of superconducting material 104 disposedover the substrate (e.g., directly on substrate 102 or with one or moreoptional intervening layers 106 between substrate 102 and the patternedlayer of superconducting material 104). For example, in someembodiments, the one or more optional intervening layers 106 include anadhesion layer that increases adherence between the substrate 102 andthe patterned layer of superconducting material 104. The patterned layerof superconducting material 104 can be formed by depositing a layer ofthe superconducting material (e.g., niobium, niobium oxide, etc.) usinga standard deposition technique (e.g., magnetron sputtering) and thenpatterning the deposited layer of superconducting material usingstandard lithographic techniques, such as optical lithography or e-beamlithography, combined with etching of unwanted portions of the layer ofsuperconducting material. In some embodiments, the patterned layer ofsuperconducting material 104 has a thickness of a few nanometers to tensof nanometers. Thus, it should be noted that FIGS. 1A-1B are not drawnto scale, but rather are drawn to illustrate the arrangement of thevarious components.

The layer of superconducting material is patterned to form a pluralityof distinct instances of the layer of superconducting material. In someembodiments, a distinct instance of a layer of material is an isolatedregion of the material (e.g., not connected to any other instance viathe material). For example, as shown in FIG. 1C, the layer ofsuperconducting material is patterned to form a first wire 108 (a writewire, as described below) and a loop 110 that is (i) distinct andseparate from first wire 108 and (ii) capacitively coupled to the firstwire 108 while first wire 108 and loop 110 are in a superconductingstate. First wire 108 and loop 110 are distinct instances of the layerof superconducting material because they are not connected to oneanother by the layer of superconducting material.

Alternatively, in some embodiments, first wire 108 is made of a firstsuperconducting material (e.g., niobium) and loop 110 is a made of asecond superconducting material that is different from the firstsuperconducting material (e.g., cadmium). For example, in someembodiments, a layer of the first superconducting material is depositedand etched to form first wire 108. Subsequently, a layer of the secondsuperconducting material, different from the first, is deposited andetched to form loop 110. In some embodiments, first wire 108 and loop110 are made of the same superconducting material, but are formed fromdifferent layers of the superconducting material, as shown in FIG. 1D.For example, in some embodiments, a layer of the superconductingmaterial is deposited and etched to form first wire 108 and a differentlayer of the same superconducting material is deposited and etched toform loop 110. In some circumstances, using separate layers of the samesuperconducting material for first wire 108 and loop 110 is desirable,for example, to control the thicknesses of first wire 108 and loop 110separately (thereby controlling their respective critical currents) orto form first wire 108 and loop 110 in a vertical arrangement ratherthan side-by-side (e.g., the side-by-side arrangement is shown in FIGS.1A-1C and the vertical arrangement is shown in FIG. 1D).

As explained in greater detail with reference to FIGS. 2A-2F, loop 110is a bit-storage element, and, to that end, is configured to form apersistent current representing a logic state of the superconductingmemory cell 100 in response to a write current applied to first wire108. When first wire 108 and loop 110 are in the superconducting state,the write current is transferred to loop 110 by the capacitive coupling.

As used herein, two elements are capacitively coupled when they areAC-coupled (e.g., but not DC-coupled). In some embodiments, two elementsare capacitively coupled (e.g., AC coupled) when there is no directconductive pathway between the first element and the second element(e.g., there is no conductive material connecting the first element withthe second element). Nonetheless, when two elements are capacitivelycoupled, the first element and second element are in electricalcommunication via a displacement current. When the first element iscapacitively coupled to the second element, an AC current on the firstelement is transferred to the second element, and vice-versa, but a DCcurrent on the first element is not transferred to the second element,and vice-versa.

In some embodiments, the spacing between first wire 108 and loop 110 isconfigured to provide the capacitive coupling (e.g., the geometry of thepatterning of the layer of superconducting material provides thecapacitive coupling). In some embodiments, a distance between first wire108 and loop 110 provides the capacitive coupling (e.g., a portion offirst wire 108 closest to loop 110 is 10, 15, or 30 nm from loop 110,which provides an adequate capacitance to form a persistent current inloop 110 in response to a write current of predefined magnitude on firstwire 108).

In some embodiments, the plurality of distinct instances of the layer ofsuperconducting material 104 includes a second wire 112 (e.g., a readwire) that is distinct and separate from first wire 108 and loop 110.Alternatively, second wire 112 may be made of a differentsuperconducting material than first wire 108 and/or loop 110. Stillalternatively, second wire 112 may be made from a different layer of thesame superconducting material as first wire 108 and/or loop 110. Secondwire 112 is capacitively coupled to loop 110 while loop 110 and secondwire 112 are in the superconducting state. As explained in greaterdetail with reference to FIGS. 2A-2F, second wire 112 is configured to,while loop 110 and second wire 112 are in the superconducting state,form a read current via the capacitive coupling in response to thepersistent current in loop 110.

In some embodiments, superconducting memory cell 100 includes a heatingelement 114 thermally coupled to second wire 112. In some embodiments,heating element 114 includes a resistive heater. In such embodiments,when heating element 114 remains activated (e.g., in an “on” state)current passes through the resistive heater to generate heat. In someembodiments, superconducting memory cell 100 includes, or is part of alarger memory device that includes, circuitry to activate and deactivatethe heating element (e.g., memory device 300, FIG. 3). The heatingelement 114 is configured to, when activated, heat second wire 112 abovea critical temperature of the superconducting material so that thesuperconducting material in second wire 112 is not in thesuperconducting state (e.g., heat second wire 112 so that it is in aresistive state). Heating second wire 112 above its superconductingmaterial's critical temperature prevents read-out of the memory cell(e.g., loop 110 and second wire 112 are not capacitively coupled whensecond wire 112 is in the resistive state). Thus, in some embodiments,heating element 114 delays (e.g., gates) the read out of superconductingmemory cell 100 until heating element 114 is deactivated in response toa control signal requesting read out. For example, when heating element114 is deactivated, second wire 112 is cooled (e.g., cryogenically)below the critical temperature of the superconducting material of secondwire 112 so that the superconducting material of second wire 112 is inthe superconducting state, resulting in capacitive coupling between loop110 and second wire 112, which allows the read current to form in secondwire 112.

The heating element 114 thereby prevents the persistent current fromjumping to the second wire before read out of superconducting memorycell 100. When superconducting memory cell 100 is ready to be read out,heating element 114 is deactivated so that second wire 112 cools belowthe critical temperature, thereby enabling the capacitive couplingbetween loop 110 and second wire 112 so that the persistent currentpulse “jumps” to second wire 112, where it can be read out.

In some embodiments, superconducting memory cell 100 disables first wire108 when there is already a persistent current on loop 110 (e.g., byeliminating or adequately diminishing the capacitive coupling betweenfirst wire 108 and loop 110). In some embodiments, superconductingmemory cell 100 disables first wire 108 by transitioning first wire 108out of its superconducting state to its resistive state. To that end, insome embodiments, first wire 108 has a notch 116 formed therein at alocation along first wire 108. In some embodiments, notch 116 is filledwith insulating material so that the conductive path of first wire 108is narrower at notch 116. In some embodiments, notch 116 is configured(e.g., geometrically, using the selection criteria, described below) totransition first wire 108 from a superconducting state to a resistivestate upon application of a write current of predefined magnitude. Thedimensions of first wire 108 at notch 116 are selected so that a currentdensity of the write current (e.g., which has a predefined magnitude) atthe location along first wire 108 exceeds critical current density offirst wire 108, thereby transitioning first wire 108 from thesuperconducting state to a resistive state upon application of the writecurrent. For example, in some embodiments, the layer of superconductingmaterial 104 has a thickness t (e.g., first wire 108 has thickness t). Anon-constricted (e.g., upstream) portion of first wire 108 has width w₁.Notch 116 creates a location in first wire 108 that has a minimum widthw₂. The thickness t and the minimum width w₂ are selected such that thewrite current exceeds the critical current density at the location ofthe constriction.

As noted above, when a write current is applied along the first wire,the write current “jumps” to loop 110 to form the persistent current inloop 110, which stores the logic state of the memory cell (e.g., storesone or more bits). Notch 116 effectively de-activates first wire 108 bycausing the current density to exceed the critical current density, thustransitioning first wire 108 to a resistive state. This eliminates (orat least adequately diminishes) the capacitive coupling between firstwire 108 and loop 110, which is present only when first wire 108 andloop 110 are both superconducting. Eliminating the capacitive couplingprevents the persistent current from “jumping back” to first wire 108once the persistent current circles loop 110. In some embodiments, notch116 is positioned along first wire 108 such that there is sufficientcapacitive coupling between first wire 108 and loop 110 for the writecurrent to “jump” to the loop 110 (e.g., form the persistent current)while also causing first wire 108 to transition to a resistive statebefore the persistent current circles loop 110 and returns to a side ofloop 110 proximal to first wire 108 (e.g., first wire 108 goes resistivebefore the persistent current has an opportunity to “jump back”).

In some embodiments, the capacitive coupling between first wire 108 andloop 110 is governed by the geometry of the patterning ofsuperconducting material 104. In some embodiments, loop 110 is elongatedalong a direction of first wire 108. For example, as shown in FIG. 1A,loop 110 has a “race track” shape. The long edge of the race track shapeof loop 110 is substantially parallel to first wire 108, increasing thecapacitive coupling between first wire 108 and loop 110. Other ways ofgeometrically increasing the capacitive coupling between the first wireand the loop will be apparent to one of ordinary skill in the art. Forexample, in some embodiments, first wire 108 is curved to remain at asubstantially uniform distance from loop 110 over a portion of loop 110(e.g., first wire 108 and loop 110 together form a “ball and socket”shape).

In some embodiments, superconducting memory cell 100 further includes adielectric material 118 disposed in a coplanar fashion with first wire108 and loop 110. In some embodiments, dielectric material 118 increasesthe capacitance of the first wire 108 and loop 110 (e.g., to increasethe capacitive coupling between first wire 108 and loop 110). In someembodiments, dielectric material 118 fills in the space between firstwire 108 and loop 110. In some embodiments, dielectric material 118 isdeposited after the patterned layer of superconducting material 104 isformed (e.g., dielectric material 118 is deposited over the patternedlayer of superconducting material 104). In some embodiments, dielectricmaterial 118 covers the patterned layer of superconducting material 104so that the dielectric material 118 also serves as a protective layerfor the patterned layer of superconducting material 104.

FIGS. 2A-2F provide an example illustrating the operation of asuperconducting memory cell 100 (FIGS. 1A-1B) in accordance with someembodiments. FIG. 2A shows superconducting memory cell 100 at a firsttime that is prior to application of a write current to first wire 108.At the first time, a control current is supplied to heating element 114(e.g., a resistive heater thermally coupled with second wire 112). Whenactivated, heating element 114 delays (e.g., gates) the read out ofsuperconducting memory cell 100 by preventing current from “jumping” tosecond wire 112 (e.g., from loop 110). To that end, heating element 114heats a portion of second wire 112 above its critical temperature andcreates a resistive region 202. In some embodiments, because heatingelement 114 has a relatively slow switching time (e.g., takes arelatively long time to heat/cool in response toactivation/deactivation, as compared with the time it takes to apply awrite current), heating element 114 has a default activated state and isdeactivated when a read operation is requested.

In some embodiments, first wire 108 and loop 110 are in asuperconducting state. While first wire 108 and loop 110 are in thesuperconducting state, first wire 108 and loop 110 are capacitivelycoupled. In some embodiments, first wire 108 and loop 110 are cooledbelow the critical temperature of their respective superconductingmaterials (which, in some embodiments, is the same superconductingmaterial) to maintain first wire 108 and loop 110 in a superconductingstate. In some embodiments, the entire superconducting memory cell 100(e.g., the chip on which superconducting memory cell 100 is formed) iscooled below the critical temperature of the lowest superconductingmaterial used in superconducting memory cell 100 to maintain first wire108 and loop 110 in a superconducting state.

FIG. 2B shows superconducting memory cell 100 at a second time (e.g.,after the first time). At the second time, a write current 204 isapplied to first wire 108 while loop 110 and first wire 108 are in thesuperconducting state. In some embodiments, write current 204 has apredefined magnitude and/or a predefined duration. As a result, at athird time (e.g., very shortly after the second time), as shown in FIG.2C, a persistent current 206 representing a logic state ofsuperconducting memory cell 100 (e.g., representing a bit) is formed onloop 110. In some embodiments, because loop 110 has zero resistance inthe superconducting state, persistent current 206 remains on loop 110 aslong as loop 110 remains in the superconducting state (e.g., until loop110 transitions to the resistive state).

FIG. 2C also illustrates write current 204 reaching notch 116. Thepurpose of notch 116 is to transition first wire 108, upon applicationof write current 204, to a resistive (non-superconducting) state so thatthe persistent current 206 does not “jump back” to first wire 108 (e.g.,notch 116 disables the capacitive coupling after transferring a currentto loop 110). To that end, first wire 108 and notch 116 are, in someembodiments, geometrically configured so that write current 204 (e.g.,of predefined magnitude) remains below the critical current density inportions of first wire 108 not constricted by notch 116 and exceeds thecritical current density at the constriction formed by notch 116.

These geometrical constraints provide selection criteria from whichsuperconducting memory cell 100 can be designed (e.g., from which firstwire 108 and, more specifically, notch 116 can be designed). Inaccordance with some embodiments, the selection criteria described belowuse simplifying assumptions, such as a uniform current distributionthrough a cross-section of first wire 108. The current distribution can,however, in accordance with some embodiments, be more accuratelydetermined using any of a variety of simulation tools, thus resulting ina more accurate design of notch 116. The term “selection criteria”should therefore be construed as numerically- or analytically-calculateddesign constraints on the geometry of notch 116. In some embodiments,the selection criteria provide a set of suitable values for thepredefined magnitude and/or duration for the write current 204, thethickness t of the patterned layer of superconducting material 104, thewidth w₁ of the unconstricted portion of first wire 108, and/or theminimum width w₂ of the constricted portion of first wire 108. The term“selection rule” is used below to denote analytical selection criteria(e.g., equations rather than numerical simulations) based on simplifyingassumptions (e.g., toy physical models of superconducting memory cell100).

To that end, assuming uniform current distribution in first wire 108,the requirement that the write current remain below the critical currentdensity in the unconstricted portion of first wire 108 gives rise to afirst selection rule:

$\begin{matrix}{\frac{I_{w}}{w_{1} \times t} < j_{c}} & (1)\end{matrix}$where I_(w) is the predefined magnitude of the write current 204 (e.g.,a peak/maximum magnitude of write current 204) and j_(c) is the criticalcurrent density for the superconducting material from which first wire108 is formed.

The requirement that write current 204 exceed the critical currentdensity at the location of the constricted portion of first wire 108with minimum width w₂ gives rise to a second selection rule:

$\begin{matrix}{\frac{I_{w}}{w_{2} \times t} \geq j_{c}} & (2)\end{matrix}$In some embodiments, the patterned layer of superconducting material 104(FIG. 1B) is a thin film having a thickness between 2 nm and 10 nm (thusthe first wire has a thickness between 2 nm and 10 nm). In someembodiments, first wire 108 has an unconstricted width between 10 nm and200 nm. In some embodiments, IL is between 0.5 μA and 10 μA.

FIG. 2D illustrates superconducting memory cell 100 at a fourth time(e.g., after the third time). FIG. 2D illustrates that, as a result ofwrite current 204 reaching notch 116 (and thereby exceeding the criticalcurrent), a resistive region 208 is formed in first wire 108.

FIG. 2E illustrates superconducting memory cell 100 at a fifth time(e.g., after the fourth time). In some embodiments, the resistive region208 expands from notch 116 as the current is dissipated by thenow-resistive first wire 108, which heats an expanding portion of firstwire 108 above the critical temperature of the superconducting material.In some embodiments, resistive region 208 is sufficiently large so as todiminish or eliminate the capacitive coupling between first wire 108 andloop 110 below a predetermined threshold (e.g., lowers the capacitancebetween first wire 108 and loop 110 so that first wire 108 iseffectively no longer in AC-electrical communication with loop 110). Insome embodiments, write current 204 is shaped as a step function, suchthat:I=0 if T<T _(w);  (3)I=I _(w) if T≥T _(w).  (4)In Equations (3)-(4) above, I is the current through first wire 108,I_(w) is the predefined magnitude of write current 204, Tis time, andT_(w) is the time at which write current 204 is applied. By shapingwrite current 204 as a step function, first wire 108 is maintained in aresistive state after write current 204 is applied. In some embodiments,Equations (3)-(4) hold as long as persistent current 206 is stored onloop 110 (e.g., Equations (3)-(4) hold until the logic state ofsuperconducting memory cell 100 has been read out), after which thecurrent through the first wire 108 can be turned off and thesuperconducting memory cell 100 can be returned to a state where it isready to be written again.

FIG. 2F illustrates superconducting memory cell 100 at a sixth time(e.g., after the fifth time). As shown in FIG. 2F, at the sixth time,heating element 114 has been deactivated (e.g., current is no longerpassing through the resistive heater). In some embodiments, when heatingelement 114 is deactivated, second wire 112 cools below itssuperconducting material's critical temperature, transitioning secondwire 112 to a superconducting state (e.g., when cooled, the entirety ofsecond wire 112 is in the superconducting state and no portion of secondwire 112 is in a resistive state). When loop 110 and second wire 112 areboth in a superconducting state, loop 110 and second wire 112 arecapacitively coupled. Under these conditions, a read current 210 isformed in second wire 112 in response to persistent current 206 (e.g.,persistent current 206 jumps to second wire 112 to form read current210). In some embodiments, second wire 112 transmits the read current toadditional circuitry 220 (e.g., a sense amp). In some embodiments,second wire 112 is electrically coupled to additional circuitry 220 fordetecting and/or measuring read current 210 in second wire 112.

FIG. 3 illustrates a memory device 300 with superconducting memory cellsin accordance with some embodiments. In some embodiments, the memorydevice 300 comprises a non-transitory memory (e.g., a machine-readablestorage medium). Memory device 300 includes memory controller 302 andone or more arrays of memory cells 304. For example, each memory cell inthe one or more arrays of memory cells 304 is a superconducting memorycell 100, described above with reference to FIGS. 1A-1D and FIGS. 2A-2F.

In some embodiments, the one or more arrays of memory cells 304 areformed by one or more memory dies. In some embodiments, each memory dieincludes one or more die planes that each have their own circuitry(e.g., sense amplifiers and the like) to support memory operations(e.g., read/write/erase processes that are the result of host commandsfrom an external computer system or that are the result of internalprocesses/calculations). In some embodiments, the memory arrays areorganized into pages (e.g., a page of 2212 eight-bit bytes, where eachbit is a value stored in an individual superconducting memory cell 100).In some embodiments, a page corresponds to a word line (or a portion ofa word line) on a die plane. In some embodiments, pages are organizedinto blocks (e.g., a block is 64 pages), and there are a fixed number ofblocks per die plane (e.g., 8224 blocks).

In some embodiments, memory device 300 includes circuitry to supportmemory operations (e.g., read/write/erase processes that are the resultof host commands from an external computer system or that are the resultof internal processes/calculations). For example, memory device 300includes write control circuitry 308 to address a respective memory cellin the array of memory cells and direct a write current to therespective memory cell. In some embodiments, memory device 300 includesread control circuitry 310 to address a respective memory cell in thearray of memory cells and read out a respective memory cell (e.g., bydeactivating its heating element 114 so as to transition its second wireto a superconducting state, as described above).

In some embodiments, memory device 300 includes an input/output (I/O)module 316 that receives host commands (e.g., read/write/erase commands)and/or data from an external host computer or external computingcircuitry. Memory device 300 further optionally includes control lines312 (e.g., control lines 312-a and 312-b) for transferring commandsbetween components and data buses 314 (e.g., data buses 314-a and 314-b)for transferring data between components.

FIG. 4 illustrates a method 400 of using an electronic device (e.g., asuperconducting memory cell) in accordance with some embodiments.

Method 400 includes obtaining (402) an electronic device comprising asubstrate, a first wire of superconducting material disposed over thesubstrate, and a loop of superconducting material disposed over thesubstrate. When the loop and the first wire are in a superconductingstate, the loop is capacitively coupled to the first wire. For example,in some embodiments the electronic device includes a superconductingmemory cell 100 (FIGS. 1A-1C).

In some embodiments, method 400 includes cooling (404) (e.g.,cryogenically) the electronic device below a critical temperature of thesuperconducting material. In some embodiments, cooling the electronicdevice includes cooling an entire chip that the electronic device isfabricated on. In some embodiments, when the electronic device includesdifferent superconducting materials (e.g., the first wire is made of adifferent superconducting material than the loop), cooling theelectronic device includes cooling the device below the lowest criticaltemperature of any of the superconducting materials. In someembodiments, the cooling is performed using any cooling technology thatcan reach the critical temperature(s) of the superconducting material.For high-temperature superconductors, these technologies include coolingwith liquid nitrogen. For lower-temperature superconductors,technologies such as dilution refrigeration, adiabatic demagnetization,and helium refrigeration can be used.

The method further includes, while the loop and the first wire are in asuperconducting state, applying (406) a current to the first wire,thereby transferring a persistent current to the loop via the capacitivecoupling between the first wire and the loop. The persistent current inthe loop represents a logic state. In some embodiments, the presence ofa persistent current in the loop represents a logical “1.” In someembodiments, the presence of a persistent current in the loop representsa logical “0.” In some embodiments, the current has a predefinedmagnitude. In some embodiments, applying the current to the first wiretransitions the first wire to a resistive state (e.g., as describedabove with reference to FIGS. 2A-2F). In some embodiments, the currentthrough the first wire is a step-function that maintains the first wirein a resistive state after the current has been applied.

In some embodiments, the electronic device further comprises (408) asecond wire of the superconductive material. When the loop and thesecond wire are in a superconducting state, the second wire iscapacitively coupled to the loop. The electronic device furthercomprises a heating element thermally coupled to the second wire andcircuitry to activate and deactivate the heating element to controlwhether the second wire is in a superconducting state or a resistivestate. While the heating element is activated, the second wire is heatedabove a critical temperature of the superconductive material so that thesuperconductive material is not in the superconducting state, therebydelaying read out of the logic state. While the heating element isdeactivated, the second wire is cooled below the critical temperature ofthe superconductive material so that the superconductive material is inthe superconducting state, forming a read current in the second wire. Insome embodiments, the heating element is activated by default. In someembodiments, the method includes activating the heating element prior toapplication of the current to the first wire; maintaining activation ofthe heating element for a time period following application of thecurrent to the first wire; and subsequently deactivating the heatingelement at a later time to read out a logical state of the memorydevice.

In some embodiments, the method further includes applying an eraseoperation to the electronic device. In some embodiments, applying theerase operation includes heating the loop above its critical temperatureto transition the loop to a resistive state (thus dissipating thepersistent current). In some embodiments, heating the loop above itscritical temperature includes heating the entire electronic device(e.g., the entire chip) above the critical temperature of the loop. Insome embodiments, heating the loop above its critical temperatureincludes ceasing to cool the electronic device. In some embodiments, theelectronic device further comprises a second heating element thermallycoupled to the loop and circuitry to activate and deactivate the secondheating element to control whether the loop is in a superconductingstate or a resistive state. The method further includes activating thesecond heating element to transition the loop to a resistive state toerase the logic state of the device.

The terminology used in the description of the various describedembodiments herein is for the purpose of describing particularembodiments only and is not intended to be limiting. As used in thedescription of the various described embodiments and the appendedclaims, the singular forms “a”, “an” and “the” are intended to includethe plural forms as well, unless the context clearly indicatesotherwise. It will also be understood that the term “and/or” as usedherein refers to and encompasses any and all possible combinations ofone or more of the associated listed items. It will be furtherunderstood that the terms “includes,” “including,” “comprises,” and/or“comprising,” when used in this specification, specify the presence ofstated features, integers, steps, operations, elements, and/orcomponents, but do not preclude the presence or addition of one or moreother features, integers, steps, operations, elements, components,and/or groups thereof.

It will also be understood that, although the terms first, second, etc.,are, in some instances, used herein to describe various elements, theseelements should not be limited by these terms. These terms are only usedto distinguish one element from another. For example, a first currentcould be termed a second current, and, similarly, a second current couldbe termed a first current, without departing from the scope of thevarious described embodiments. The first current and the second currentare both currents, but they are not the same current unless explicitlystated as such.

As used herein, the term “if” is, optionally, construed to mean “when”or “upon” or “in response to determining” or “in response to detecting”or “in accordance with a determination that,” depending on the context.

The foregoing description, for purpose of explanation, has beendescribed with reference to specific embodiments. However, theillustrative discussions above are not intended to be exhaustive or tolimit the scope of the claims to the precise forms disclosed. Manymodifications and variations are possible in view of the aboveteachings. The embodiments were chosen in order to best explain theprinciples underlying the claims and their practical applications, tothereby enable others skilled in the art to best use the embodimentswith various modifications as are suited to the particular usescontemplated.

What is claimed is:
 1. An electronic device, comprising: a substrate;and a layer of superconducting material disposed over the substrate,wherein the layer of superconducting material comprises: a first wire;and a loop that is (i) distinct and separate from the first wire and(ii) capacitively coupled to the first wire while the loop and the firstwire are in a superconducting state.
 2. The electronic device of claim1, wherein the layer of superconducting material further includes: asecond wire that is (i) distinct and separate from the first wire andthe loop and (ii) capacitively coupled to the loop while the loop andthe second wire are in the superconducting state.
 3. The electronicdevice of claim 2, further comprising: a heating element thermallycoupled to the second wire; and circuitry to activate and deactivate theheating element.
 4. The electronic device of claim 1, wherein: the firstwire has a notch formed therein at a location along the first wire; anddimensions of the first wire at the notch are such that a density of acurrent at the location along the first wire exceeds a critical currentdensity, thereby transitioning the first wire from the superconductingstate to a resistive state upon application of a current.
 5. Theelectronic device of claim 1, wherein the loop is elongated along adirection of the first wire.
 6. The electronic device of claim 1,further including a dielectric material disposed coplanar with the firstwire and the loop.
 7. An electronic device, comprising: a memory cell,the memory cell including: a first wire made of a first superconductingmaterial; and a loop that is: made of a second superconducting material;distinct and separate from any other electrical wire, including thefirst wire; and capacitively coupled to the first wire while in asuperconducting state; and circuitry to direct a write current to thefirst wire of the memory cell.
 8. The electronic device of claim 7,wherein the first superconducting material and the secondsuperconducting material are the same superconducting material.
 9. Theelectronic device of claim 7, wherein the first wire and the loop areformed from distinct instances of a layer of the same superconductingmaterial.
 10. The electronic device of claim 7, wherein the firstsuperconducting material and the second superconducting material aredifferent superconducting materials.
 11. A memory device, comprising, anarray of memory cells, each memory cell of the array of memory cellscomprising: a substrate; a layer of superconducting material disposedover the substrate, wherein the layer of superconducting materialcomprises: a first wire; and a loop that is (i) distinct and separatefrom the first wire and (ii) capacitively coupled to the first wirewhile the loop and the first wire are in a superconducting state; andcircuitry to address a respective memory cell in the array of memorycells so as to direct a write current to the first wire of a respectivememory cell.